IEC IEC63068-4 Edition1.02022-07 INTERNATIONAL STANDARD Semiconductordevices-Non-destructive recognitioncriteria of defects in siliconcarbidehomoepitaxialwaferforpowerdevices- Part 4:Procedure for identifying andevaluating defects usinga combined methodofoptical inspectionandphotoluminescence IEC 63068-4:2022-07(en) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright@2022 IEC,Geneva,Switzerland or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or your local IEC member National Committee for further information. IEC Secretariat Tel.: +41 22 919 02 11 3. rue de Varembe
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[email protected]. IEC IEC63068-4 Edition 1.02022-07 INTERNATIONAL STANDARD Semiconductordevices-Non-destructiverecognitioncriteriaofdefectsin siliconcarbidehomoepitaxialwaferforpowerdevices Part4:Procedureforidentifyingandevaluatingdefects usingacombined methodofoptical inspectionandphotoluminescence INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 31.080.99 ISBN 978-2-8322-4307-7 Warning! Make sure that you obtained this publication from an authorized distributor. D Fegstarodtaderfatofpe icad Coeiasio