论文标题
单层中的激子和摩西双层的激子的类比和差异
Analogy and dissimilarity of excitons in monolayer and bilayer of MoSe$_2$
论文作者
论文摘要
半导体过渡金属二核苷层的薄层中的激子高度约束这些材料中的库仑电子孔相互作用。因此，它们不遵循二维氢原子的模型系统。我们在单层（ML）和摩西（Mose）$ _2 $的单层（ML）和双层（BL）中对实验和理论上的激发性特性进行了研究。 Mose $ _2 $ ml和BL的反射率对比光谱的测得的磁场演变使我们能够确定Intralayer A和B Intralayer A和B激子的$ G $ -FACTOR，以及Interlayer Intrayer Ickiton的$ G $ factor。我们使用第一原理计算来解释$ g $ factors对层和激发状态的数量的依赖性。此外，我们证明，可以使用$ \ mathbf {k \ cdot p} $接近MAL中的激子$ s $状态的实验测量的梯子，该梯子与Rytova-keldysh的潜力相结合。相比之下，BL情况的类似计算需要考虑到Mose $ _2 $ bl的平面外介电响应。
Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe$_2$ encapsulated in hexagonal BN. The measured magnetic field evolutions of the reflectance contrast spectra of the MoSe$_2$ ML and BL allow us to determine $g$-factors of intralayer A and B excitons, as well as the $g$-factor of the interlayer exciton. We explain the dependence of $g$-factors on the number of layers and excitation state using first principles calculations. Furthermore, we demonstrate that the experimentally measured ladder of excitonic $s$ states in the ML can be reproduced using the $\mathbf{k\cdot p}$ approach with the Rytova-Keldysh potential that describes the electron-hole interaction. In contrast, the analogous calculation for the BL case requires taking into account the out-of-plane dielectric response of the MoSe$_2$ BL.
