论文标题
Gatemon Qubits中的介质连接处的几个模式
Few-mode to mesoscopic junctions in gatemon qubits
论文作者
论文摘要
我们研究了纳米线的两个方面上的半导体纳米线值，带有外延的Al，从而允许电线密度的栅极控制。两个部分已删除，一个部分形成约瑟夫森交界处，另一个作为晶体管运行，提供了直流运输和量子运行之间的原位切换。门控NW改变了散装电势分布，而门控约瑟夫森交界处则改变了连接模式的数量。两种效果都通过量子频率对平行磁场的依赖性揭示。电线和连接的详细模型产生与实验一致的行为。在多模式制度中，贵族频率的波动比理论上的“通用”值小得多，也小于数字，并且与先前的波动临界电流的测量值一致。
We investigate a semiconductor nanowire-based gatemon qubit with epitaxial Al on two facets of the nanowire, allowing gate control of wire density. Two segments have the Al removed, one forming a Josephson junction and the other operating as a transistor, providing in-situ switching between dc transport and qubit operation. Gating the NW changes the bulk wire potential distribution, while gating the Josephson junction changes the number of junction modes. Both effects are revealed by the dependence of qubit frequency on parallel magnetic field. A detailed model of the wire and junction yields behavior consistent with experiment. In the multi-mode regime, fluctuations in qubit frequency are considerably smaller than the theoretical "universal" value, also smaller than numerics, and consistent with previous measurements of fluctuating critical current.
