论文标题
高效且可扩展的Gainas热伏型设备
Efficient and Scalable GaInAs Thermophotovoltaic Devices
论文作者
论文摘要
嗜热伏洛尔特（Hypophotovoltaics）是有希望的固态能量转换器，用于各种应用，例如网格尺度的存储，集中太阳能电力和废热恢复。在这里，我们报告了大面积（0.8 cm $^2 $）的设计，制造和测试，可扩展的，单连接0.74-EV Gainas Thermophotophotophotophotovoltaic设备，效率达到38.8 $ \ pm $ 2.0％，电力密度为3.78 W/cm $^2 $ $^2 $^2 $^2 $^2 $^2 $^2 $^$^$^$^$^$^$^$^$^$^$^2 $ cyitter cyitter温度为1850°C。在不牺牲效率的情况下达到如此高的发射极温度和功率密度是将良好的光谱管理与高度优化的电池结构，优异的材料质量和非常低的串联电阻相结合的直接结果。重要的是，在两英寸的晶圆上制造12个高性能设备可重复，并且可以轻松将细胞设计转移到更大的晶圆上的商业外观上。可以通过使用多功能体系结构获得进一步的提高效率，并获得两开连接0.84-EV Gainpas / 0.74-EV Gainas设备的早期结果说明了这一诺言。
Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical power density of 3.78 W/cm$^2$ at an emitter temperature of 1850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs / 0.74-eV GaInAs device illustrate this promise.
