论文标题

扭曲控制石墨烯双层中层间相干性的出现

Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers

论文作者

Lin, Kenneth, Prasad, Nitin, Burg, G. William, Zou, Bo, Ueno, Keiji, Watanabe, Kenji, Taniguchi, Takashi, MacDonald, Allan H., Tutuc, Emanuel

论文摘要

我们报告了增强的层间隧道,并在零层中偏置的线宽减少,在量子厅制度中的扭曲控制的双单层石墨烯异质结构中,当顶部($ v _ {\ v _ {\ mathrm {t}}} $)和底部($ν_ {\ mathrm {t} $)和($ν_ $ν_ {\ mathrm {t}} = \ pm1/2,\ pm3/2 $和$ν_ {\ mathrm {b}} = \ pm1/2,\ pm3/2 $,以及总填充因子$ν= \ pm1 $或$ \ pm3 $。零偏置层间电导峰在层填充因子的变化方面是稳定的,并信号是层间相干性的出现。我们的结果强调了扭曲控制是使用隧道揭示层间相干性的关键属性。

We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($ν_{\mathrm{T}}$) and bottom ($ν_{\mathrm{B}}$) layer filling factors are near $ν_{\mathrm{T}}=\pm1/2, \pm3/2$ and $ν_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $ν= \pm1$ or $\pm3$. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute in revealing interlayer coherence using tunneling.

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