论文标题
对新兴和自然丰富的2D材料的高吞吐量研究:Clinochlore
High throughput investigation of an emergent and naturally abundant 2D material: Clinochlore
论文作者
论文摘要
植物硅酸盐矿物质形成一类天然分层材料(LMS),最近被认为是二维(2D)材料的低成本来源。 Cinlochlore [MG5AL(ALSI3)O10(OH)8]是自然界中最丰富的Phyllosilicate矿物之一,表现出可以机械剥落至几层的能力。一个重要的特征Clinochlore是缺陷和杂质的自然出现,它们可能会以技术有趣的方式影响其光电特性。在目前的工作中,我们对散装和2D剥落形式的Clinochlore结构进行了彻底的研究,讨论了其光学特征以及杂质插入其宏观特性的影响。采用了几种实验技术,其次是理论上的第一原理计算,考虑了矿物晶格中几种类型的天然转化金属杂质及其对电子和光学特性的影响。我们证明了有关表面质量和Clinochlore的绝缘性能的需求,这些要求适用于其在纳米电子设备中的适当应用。这项工作中介绍的结果为Clinochlore的潜在应用提供了重要信息,并为旨在通过缺陷工程为相关2D技术应用优化其属性的进一步工作提供了基础。
Phyllosilicate minerals, which form a class of naturally occurring layered materials (LMs), have been recently considered as a low-cost source of two-dimensional (2D) materials. Clinochlore [Mg5Al(AlSi3)O10(OH)8] is one of the most abundant phyllosilicate minerals in nature, exhibiting the capability to be mechanically exfoliated down to a few layers. An important characteristic clinochlore is the natural occurrence of defects and impurities which can strongly affect their optoelectronic properties, possibly in technologically interesting ways. In the present work, we carry out a thorough investigation of the clinochlore structure on both bulk and 2D exfoliated forms, discussing its optical features and the influence of the insertion of impurities on its macroscopic properties. Several experimental techniques are employed, followed by theoretical first-principles calculations considering several types of naturally-ocurring transition metal impurities in the mineral lattice and their effect on electronic and optical properties. We demonstrate the existence of requirements concerning surface quality and insulating properties of clinochlore that are mandatory for its suitable application in nanoelectronic devices. The results presented in this work provide important informations for clinochlore potential applications and establish a basis for further works that intend to optimize its properties to relevant 2D technological applications through defect engineering.