论文标题
通过声子辅助传导现象确定电子陷阱水平在fe掺杂的GAN中
Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon
论文作者
论文摘要
我们使用非连接天线传播声音呼声法在高抗性Fe掺杂的GAN中测量了热激活传导（TAC）的能级。声学衰减在特定温度下的最大值，在特定温度下，借助声子能量加速了TAC。因此，在声学衰减中观察到了Debye型弛豫，其活化能（0.54 $ \ pm $ 0.04 eV）是通过在各种频率和温度下进行衰减测量确定的。该值与GAN中的E3水平一致，表明热相关的传导起源于E3陷阱水平。我们还测量了高温下五个独立的弹性常数。
We acoustically measured the energy level for thermally activated conduction (TAC) in high-resistivity Fe-doped GaN using the non-contacting antenna-transmission acoustic-resonance method. The acoustic attenuation takes a maximum at a specific temperature, where the TAC is accelerated with the help of phonon energy. The Debye type relaxation is thus observed for acoustic attenuation, and its activation energy (0.54$\pm$0.04 eV) was determined with attenuation measurements at various frequencies and temperatures. This value agrees with the E3 level in GaN, indicating that thermally associated conduction originates from the E3 trap level. We also measured the five independent elastic constants at high temperatures.
