论文标题
由Interlayer Dzyaloshinskii-Moriya互动启用了无现场的自旋轨道扭矩开关
Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction
论文作者
论文摘要
垂直磁性的结构可以使用在无野外条件下使用自旋电流切换的垂直磁性结构可能会应用于自旋轨道扭矩磁性随机记忆（SOT-MRAM）（SOT-MRAM）。几个几个结构已开发出来；但是，具有简单的堆栈结构和MRAM兼容的新结构是必需的。观察到其与垂直磁各向异性的合成抗铁磁对应物在相邻的磁层之间具有内在的层间手性相互作用，即层间层dzyaloshinskii-moriya相互作用（DMI）效应。此外，使用与层间DMI的特征向量平行的电流，我们切换了两个没有磁场的两个结构的垂直磁化，这是由于Interlayer DMI引入的其他对称性破坏。这种SOT切换方案在PT/CO多层及其合成反铁磁铁结构中实现，可能为实用的垂直SOT-MRAM和其他SOT设备打开了新的途径。
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been developed;however,new structures with a simple stack structure and MRAM compatibility are urgently needed.Herein,a typical structure in a perpendicular spin-transfer torque MRAM,the Pt/Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers,namely the interlayer Dzyaloshinskii-Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry-breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices.
