论文标题
单层MOS $ _2 $导热率和热边界电导的底物依赖性
Substrate-Dependence of Monolayer MoS$_2$ Thermal Conductivity and Thermal Boundary Conductance
论文作者
论文摘要
已知二维（2D）材料（如MOS $ _2 $）的热性能受到与环境相互作用的影响，但这主要仅通过SIO $ _2 $底物进行了研究。在这里，我们比较了单层MOS $ _2 $的导热率（TC）和热边界电导（TBC），并在无晶格（A-）和Crystalline（C-）Sio $ _2 $，Aln，Al $ _2 $ _2 $ o $ o $ _3 $和$ \ textit {h} $ - bn monolayolays andolarays anderalyics中。 The room temperature TC of MoS$_2$ is ~38 Wm$^{-1}$K$^{-1}$ on amorphous substrates and up to ~68 Wm$^{-1}$K$^{-1}$ on crystalline substrates, with most of the difference due to substrate interactions with long-wavelength MoS$_2$ phonons (< 2 THz). $ \ textit {h} $ - bn单层用作MOS $ _2 $和基板之间的缓冲区，导致MOS $ _2 $ TC增加高达50％。长度依赖性计算揭示了〜2 $μ$ m以下的TC尺寸效应，并表明MOS $ _2 $ TC是尺寸 - 但不限制在〜100 nm以下的基板。我们还发现，MOS $ _2 $的TBC带有C-AL $ _2 $ o $ $ _3 $超过两倍，尽管这两者都具有类似的MOS $ _2 $ TC，这表明TC和TBC可以独立调整。最后，我们比较了所有底物上MOS $ _2 $晶体管的热电阻，以表明MOS $ _2 $ TBC是长通道（> 150 nm）设备的热量去除量最重要的参数，而TBC和TC对于短通道也同样重要。这项工作为2D材料在各种底物上的电热应用提供了重要的见解。
The thermal properties of two-dimensional (2D) materials, like MoS$_2$, are known to be affected by interactions with their environment, but this has primarily been studied only with SiO$_2$ substrates. Here, we compare the thermal conductivity (TC) and thermal boundary conductance (TBC) of monolayer MoS$_2$ on amorphous (a-) and crystalline (c-) SiO$_2$, AlN, Al$_2$O$_3$, and $\textit{h}$-BN monolayers using molecular dynamics. The room temperature TC of MoS$_2$ is ~38 Wm$^{-1}$K$^{-1}$ on amorphous substrates and up to ~68 Wm$^{-1}$K$^{-1}$ on crystalline substrates, with most of the difference due to substrate interactions with long-wavelength MoS$_2$ phonons (< 2 THz). An $\textit{h}$-BN monolayer used as a buffer between MoS$_2$ and the substrate causes the MoS$_2$ TC to increase by up to 50%. Length-dependent calculations reveal TC size effects below ~2 $μ$m and show that the MoS$_2$ TC is size- but not substrate-limited below ~100 nm. We also find that the TBC of MoS$_2$ with c-Al$_2$O$_3$ is over twice that with c-AlN despite a similar MoS$_2$ TC on both, indicating that the TC and TBC could be tuned independently. Finally, we compare the thermal resistance of MoS$_2$ transistors on all substrates to show that MoS$_2$ TBC is the most important parameter for heat removal for long-channel (> 150 nm) devices, while TBC and TC are equally important for short channels. This work provides important insights for electro-thermal applications of 2D materials on various substrates.
