论文标题
改进的逐渐电阻切换范围和HFOX RRAM中1000倍/OFF的比例1000 x，使用$ GE_2SB_2TE_5 $热屏障
Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier
论文作者
论文摘要
对于使用电阻随机访问记忆（RRAM）的模拟内存计算，需要在多个电阻水平之间进行逐渐切换。但是，基于$ HFO_X $的常规RRAM的丝状切换通常仅产生两个稳定的内存状态，而不是在多个电阻状态之间逐渐切换。在这里，我们证明了$ ge_2sb_2te_5 $（GST）的热屏障在$ HFO_X $和底部电极（TIN）之间实现较宽和较弱的细丝，通过促进$ HFO_X $内部促进热量扩散。扫描热显微镜表明，$ HFO_X+GST $设备的加热区域比仅$ HFO_X $的控制设备更宽，这表明形成了更宽的灯丝。这样的较宽的细丝可以具有多个稳定的传导路径，从而产生了带有更多渐进和线性切换的内存设备。热增强的$ HFO_X+GST $设备的ON/OFF比率也高于控制设备（$ <10^2 $），并且中值设置的电压降低了约1 V（〜35％），其开关功率的相应降低。我们的$ HFO_X+GST $ RRAM使用快速（〜ns）相同的脉冲火车显示2倍逐渐开关范围，幅度小于2V。
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V.
