论文标题
具有被动CMOS传感器的辐照RD53A像素模块的表征
Characterization of irradiated RD53A pixel modules with passive CMOS sensors
论文作者
论文摘要
我们正在研究使用CMOS铸造厂制造硅探测器的可行性，无论是用于像素还是用于大型带状传感器。多层路由的可用性将提供优化传感器几何形状和性能的自由，并具有多层层层和MIM-CAPACITOR的偏置结构，允许AC耦合。最近在LFOUNDRY完成了150美元的CMOS流程，在LFOUNDRY完成了条带测试结构和RD53A兼容像素传感器的原型生产。本文将重点介绍由CMOS被动传感器与RD53A芯片互连的CMOS被动传感器组成的辐照和非辐照像素模块的表征。这些传感器的设计用像素单元为$ 25 \ times100 \，μ\ mathrm {m}^2 $在使用直流耦合设备的情况下，$ 50 \ times50 \，μ\ mathrm {m mathrm {m {m}^2 $用于交流耦合者。通过在实验室和梁测试中进行的测量，研究了他们在收费，位置分辨率和命中效率方面的性能。带有LFOUNDRY硅传感器的RD53A模块被照射到$ 1.0 \ times10^{16} \，\ frac {\ Mathrm {n} _ \ Mathrm {eq}}} {\ Mathrm {cmmatrm {cmm}^2} $。
We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150$\,$nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules, composed by a CMOS passive sensor interconnected to a RD53A chip. The sensors are designed with a pixel cell of $25\times100\,μ\mathrm{m}^2$ in case of DC coupled devices and $50\times50\,μ\mathrm{m}^2$ for the AC coupled ones. Their performance in terms of charge collection, position resolution, and hit efficiency was studied with measurements performed in the laboratory and with beam tests. The RD53A modules with LFoundry silicon sensors were irradiated to fluences up to $1.0\times10^{16}\,\frac{\mathrm{n}_\mathrm{eq}}{\mathrm{cm}^2}$.
