论文标题
层间激子二极管和晶体管
Interlayer Exciton Diode and Transistor
论文作者
论文摘要
控制电荷中性层中层激元（IX）准颗粒的流动可能会导致低损耗激发电路。在这里，我们报告了沿纳米级静电定义的频道的IXS单向运输，$ _2 $ -WSE $ _2 $异质结构。这些结果是通过石墨烯门中的画幅定义的三角形蚀刻来启用的，以创建势能“幻灯片”。通过在空间和时间分辨的光致发光测量中进行，我们沿结构和高速激子流平滑地测量IX能量，而漂移速度高达2 * 10 $^6 $ cm/s，这是比以前的实验大的数量级。此外，可以使用第二激光脉冲在通道中饱和的激子群体来控制激子流，从而证明了光学门控的激子晶体管。我们的工作为低损失激发电路，一维通道中的骨传输的研究以及范德华异质结构中激子的定制势能景观铺平了道路。
Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe$_2$-WSe$_2$ heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy ''slide''. By performing spatially and temporally resolved photoluminescence measurements, we measure smoothly varying IX energy along the structure and high-speed exciton flow with a drift velocity up to 2 * 10$^6$ cm/s, an order of magnitude larger than previous experiments. Furthermore, exciton flow can be controlled by saturating exciton population in the channel using a second laser pulse, demonstrating an optically gated excitonic transistor. Our work paves the way towards low loss excitonic circuits, the study of bosonic transport in one-dimensional channels, and custom potential energy landscapes for excitons in van der Waals heterostructures.
