论文标题
ch $^+$分子离子的分离重组是由非常低的能量电子诱导的
Dissociative recombination of CH$^+$ molecular ion induced by very low energy electrons
论文作者
论文摘要
我们使用多通道量子缺陷理论来计算Ch $^+ $的分离重组的横截面和速率系数，最初是在其最低振动级别$ v_i^+ = 0 $的，带有Indist Enervy Energy Bellow $ 0.2 $ ev的$ v_i^+ = 0 $。我们专注于2美元$^2π$状态的贡献，这是低碰撞能量的主要解离重组路线。最终的横截面是通过平均相关的初始旋转状态$（N_I^+ = 0，\ dots，10）$带有$ 300 $ k boltzmann分布的。麦克斯韦（Maxwell）同位素速率系数的分离重组系数也针对不同的初始旋转状态和电子旋转状态以及电子温度均可计算，并且对于电子温度和电子温度，最多可达几百kelvins。将我们的结果与存储环测量值进行比较。
We used the multichannel quantum defect theory to compute cross sections and rate coefficients for the dissociative recombination of CH$^+$ initially in its lowest vibrational level $v_i^+ = 0$ with electrons of incident energy bellow $0.2$ eV. We have focused on the contribution of the $2$ $^2Π$ state which is the main dissociative recombination route at low collision energies. The final cross section is obtained by averaging the relevant initial rotational states $(N_i^+ = 0,\dots,10)$ with a $300$ K Boltzmann distribution.The Maxwell isotropic rate coefficients for dissociative recombination are also calculated for different initial rotational states and for electronic temperatures up to a few hundred Kelvins. Our results are compared to storage-ring measurements.
