论文标题
消失在半导体界面上的费米水平固定
Disappearing of the Fermi level pinning at semiconductor interfaces
论文作者
论文摘要
我们确定了基于半导体接口的范德华（Van der Waals）基于Schottky连接的Fermi水平变化的通用性。我们表明，准弗米水平的消失固定在一定的半导体膜厚度上，用于固有的（无居住权）和外部（掺杂）半导体，在各种散装系统上，包括无机，有机体，有机乃至有机互助的杂交半导体。位于能量带隙中的FERMI水平（EF）位置不仅由底物工作函数，而且由半导体膜的厚度主导，其中最终EF应位于反映半导体本身的热平衡的位置。这种普遍性源于求解一维泊松方程后的基板和半导体膜之间的电荷转移。我们的计算解决了通过使用紫外线光谱（UPS）确定的实验结果的一些相互矛盾的结果，并统一了从（i）无机半导体到有机半导体到有机半导体的EF位置的一般规则，并统一了（ii）固有的（未型）固有的（ii）（ii）固有的（ii）固有（ii）的（ii）固有（extrinsic（doceped）的半指数）。我们的发现应提供一个简单的分析缩放，以获取有关真实设备中厚度的定量能量图，从而为对界面物理和设计功能设备的基本了解铺平了道路。
We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces-based Schottky junctions. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors, over a wide range of bulk systems including inorganic, organic, and even organic-inorganic hybridized semiconductors. The Fermi level (EF) position located in the energy bandgap was dominated by not only the substrate work function, but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the quantitative energy diagram regarding thickness in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.
