论文标题
Si Nano-Transistor中的单个ER $^{3+} $ ion的光谱扩展
Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor
论文作者
论文摘要
固体中的单个稀土离子在量子应用中显示出很大的潜力，包括单光子发射，量子计算和高精度感测。但是，对单个稀土离子观察到的均相线宽是比在散装晶体中观察到的集合的亚基洛赫兹线宽度大的数量级。光谱宽扩大为通过单个稀土离子实现纠缠产生和量子操作带来了重大挑战，因此研究拓宽机制至关重要。我们报告了一项关于Si Nano-Transistor中的单个ER $^{3+} $ ion的光谱拓宽研究。发现ER诱导的光电离率是代表光谱研究的光学转变概率的适当数量，并且单个离子光谱在所有使用的光学功能上都显示出Lorentzian线形。在相对较高的光功能下观察到光谱宽度，并由快速时间尺度上的光谱扩散引起。
Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achieving entanglement generation and qubit operation with single rare-earth ions, so it is critical to investigate the broadening mechanisms. We report a spectral broadening study on a single Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is found to be an appropriate quantity to represent the optical transition probability for spectroscopic studies, and the single ion spectra display a Lorentzian lineshape at all optical powers in use. Spectral broadening is observed at relatively high optical powers and is caused by spectral diffusion on a fast time scale.
