论文标题
纳米图案中的Memristive效果
Memristive effects in nanopatterned permalloy Kagomé array
论文作者
论文摘要
我们研究了KagoméNanopatersedPermalloy的回忆作用。我们观察到，在低频率下存在热敏电阻效应，这是由于光刻而引起的现象，并且在类似的薄膜实验中不存在。但是，我们还通过一项独立的各向异性磁扰性研究表明，占1％效应的小滞后并不归因于热敏感效应。附近热滞后之间的仔细减法方案也证实了这种影响。在Millihertz制度中，提供了一个有效的模型来描述热敏电阻的实验结果，表明应该从Millihertz到Gigahertz进行交叉，从热敏电阻到纳米图案的薄或薄或纳米薄膜的复杂效应。
We study memristive effects in Kagomé nanopatterned permalloy. We observe that at low frequencies a thermistor effect is present, a phenomenon arising due to the lithography and absent in similar experiments for thin films. However, we also show via an independent anisotropic magnetoresistive study that a small hysteresis accounting for 1% of the effect is not attributable to a thermistive effect. Such effect is also confirmed by a careful subtraction scheme between nearby thermal hysteresis. In the millihertz regime, an effective model is provided to describe the experimental results for the thermistor, showing that there should be a crossover from the millihertz to the gigahertz, from a thermistor to an memresistive effect for nanopatterned permalloy.
