论文标题
掺杂的旋转轨道耦合莫特绝缘子中的旋转和充电顺序
Spin and charge order in doped spin-orbit coupled Mott insulators
论文作者
论文摘要
我们研究了具有反对称自旋轨耦合的二维单带哈伯族哈密顿式哈密顿。我们认为，这是了解当地非中心过渡金属（TM）氧化物（例如SR $ _2 $ iroo $ _4 $）的电子特性的最小模型。基于小簇的精确对角线和随机相位近似，我们研究了对电荷和磁性的相关性效果，磁性和TM-OXYGEN-TM键角$θ$的函数。对于小型掺杂和$θ$ \ lessim $ 15^\ circ $，我们发现优势相称的面内反铁磁波动，而铁磁波动则以$θ$ $ \ gtrsim $ 25^\ circ $为主导。中等强度的最近的邻居哈伯德相互作用也可以稳定电荷密度波顺序。此外，我们比较了孔掺杂的情况的磁激励的分散，以共振非弹性X射线散射数据并找到良好的定性一致性。
We study a two-dimensional single band Hubbard Hamiltonian with antisymmetric spin-orbit coupling. We argue that this is the minimal model to understand the electronic properties of locally non-centrosymmetric transition-metal (TM) oxides such as Sr$_2$IrO$_4$. Based on exact diagonalizations of small clusters and the random phase approximation, we investigate the correlation effects on charge and magnetic order as a function of doping and of the TM-oxygen-TM bond angle $θ$. For small doping and $θ$ $\lesssim$ $15^\circ$ we find dominant commensurate in-plane antiferromagnetic fluctuations while ferromagnetic fluctuations dominate for $θ$ $\gtrsim$ $25^\circ$. Moderately strong nearest-neighbor Hubbard interactions can also stabilize a charge density wave order. Furthermore, we compare the dispersion of magnetic excitations for the hole-doped case to resonant inelastic X-ray scattering data and find good qualitative agreement.
