论文标题
使用准共振激发在液滴蚀刻的GaAS量子点中自旋的确定性制备
Deterministic preparation of spin qubits in droplet etched GaAs quantum dots using quasi-resonant excitation
论文作者
论文摘要
我们提出了一项关于确定性自旋制备的首次综合研究,该研究采用了液滴蚀刻的GAAS量子点的激发态共振。这项成就促进了使用GAAS量子点材料平台对基于自旋量子的量子记忆的未来研究。通过观察一系列基本激发型转变的激发光谱,可以揭示不同量子点能级(即壳)的性质。极化激发和检测的创新使用在准共振激发光谱中有助于确定$ 85 $ $ \%$最大旋转准备忠诚度 - 不论实验室和量子点偏光基碱的相对方向如何。此外,还研究了特征性的非放射性衰减时间,这是基态,激发共振和激发功率水平的函数,从而产生了S-P壳退出的状态过渡的衰减时间低至$ 29 $ PS。最后,到时间分解的相关光谱法下,就证明了使用的激发方案对量子点过渡的电子环境产生了重大影响,从而影响了其电荷和相干性。
We present a first comprehensive study on deterministic spin preparation employing excited state resonances of droplet etched GaAs quantum dots. This achievement facilitates future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions the properties of different quantum dot energy levels, i.e. shells, are revealed. The innovative use of polarization resolved excitation and detection in quasi-resonant excitation spectroscopy facilitates determination of $85$ $\%$ maximum spin preparation fidelity - irrespective of the relative orientations of lab and quantum dot polarization eigenbases. Additionally, the characteristic non-radiative decay time is investigated as a function of ground state, excitation resonance and excitation power level, yielding decay times as low as $29$ ps for s-p-shell exited state transitions. Finally, by time resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions thereby influencing its charge and coherence.