论文标题
拓扑结节线半候选者的磁性和电子特性：Hosbte
Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe
论文作者
论文摘要
我们报告了磁性拓扑结构线半准候选Hosbte的实验和理论研究。 Hosbte的单晶从SB通量生长，在四方分层结构（空间组：P4/NMM，No.129）中结晶，其中Ho-Te BiLayer被方形网络SB层分开。磁化强度和比热呈现与抗铁磁（AFM）相变相关的4 K时不同的异常。同时，通过施加磁场垂直并平行于晶体学C轴，观察到明显的磁各向异性。电阻率在200 k以下的金属状状态不良状态，并在约8 K处揭示了一个高原，然后由于AFM过渡而导致降落。此外，通过对频带结构的第一原则计算，我们发现Hosbte是拓扑结节线半BE或弱拓扑绝缘子，无论是否考虑自旋轨道耦合，都提供了一个平台，以研究磁性和拓扑效率之间的相互作用。
We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: P4/nmm, no.129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at 4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic c axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.
