论文标题
SIC探测器的sub-Gev暗物质
SiC Detectors for Sub-GeV Dark Matter
论文作者
论文摘要
我们建议使用碳化硅（SIC）直接检测亚GEV暗物质。 SIC具有类似于硅和钻石的特性，但具有两个关键优势：（i）它是一种极性半导体，可以使对更广泛的暗物质候选者的敏感性； （ii）它存在于许多具有不同物理特性的稳定多晶型物中，因此对各种暗物质模型具有可调敏感性。我们表明，SIC是搜索从暗物质散射到质量10 keV的电子，核和声子激发的绝佳目标，以及暗物质的吸收过程，质量为10 MeV。结合其在其他探测器技术中的替代品及其可用性与Diamond相比，我们的结果表明，SIC作为一种新颖的暗物质检测器具有很大的希望。
We propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC has properties similar to both silicon and diamond, but has two key advantages: (i) it is a polar semiconductor which allows sensitivity to a broader range of dark matter candidates; and (ii) it exists in many stable polymorphs with varying physical properties, and hence has tunable sensitivity to various dark matter models. We show that SiC is an excellent target to search for electron, nuclear and phonon excitations from scattering of dark matter down to 10 keV in mass, as well as for absorption processes of dark matter down to 10 meV in mass. Combined with its widespread use as an alternative to silicon in other detector technologies and its availability compared to diamond, our results demonstrate that SiC holds much promise as a novel dark matter detector.
