论文标题
Part2：玻璃基板上非常细的含氧氧化物的超短脉冲激光器图案
Part2: Ultra-short pulse laser patterning of very thin indium tin oxide on glass substrates
论文作者
论文摘要
我们使用343、515和1030 nm的二秒（FS）和1030 nm picseconds（ps）激光脉冲脉冲，我们研究了玻璃基板上超薄20 nm二颗二氧化物（ITO）氧化物（ITO）薄膜的选择性图案。在飞秒和皮秒时间尺度上，所有波长都观察到了消融的去除机制。在343 nm处，吸收阈值的通量值在515 nm时为12.5 mJ/cm2，9.68 mJ/cm2和7.50 mJ/cm2在1030 nm的forstosecond和9.14 mj/cm2的1030 nm，用于picosecond laser的1030 Nm。使用原子力显微镜对消融陨石坑进行表面分析证实，从玻璃基板中选择性去除膜取决于所施加的通量。膜的去除主要是通过电子爆炸力产生的超快晶格变形。使用两个温度模型（TTM）模拟激光吸收和加热过程。预测的表面温度证实，通过非热机制以低于1 j/cm2的薄膜去除。
We investigate selective patterning of ultra-thin 20 nm Indium Tin Oxide (ITO) thin films on glass substrates, using 343, 515, and 1030 nm femtosecond (fs), and 1030 nm picoseconds (ps) laser pulses. An ablative removal mechanism is observed for all wavelengths at both femtosecond and picoseconds time-scales. The absorbed threshold fluence values were determined to be 12.5 mJ/cm2 at 343 nm, 9.68 mJ/cm2 at 515 nm, and 7.50 mJ/cm2 at 1030 nm for femtosecond and 9.14 mJ/cm2 at 1030 nm for picosecond laser exposure. Surface analysis of ablated craters using atomic force microscopy confirms that the selective removal of the film from the glass substrate is dependent on the applied fluence. Film removal is shown to be primarily through ultrafast lattice deformation generated by an electron blast force. The laser absorption and heating process was simulated using a two temperature model (TTM). The predicted surface temperatures confirm that film removal below 1 J/cm2 to be predominately by a non-thermal mechanism.
