论文标题
在BI2SE3单晶和薄膜中，将拓扑电流携带状态和表面转化为大体转化
Imaging the topological current carrying state and the surface to bulk transformation, in Bi2Se3 single crystal and thin film
论文作者
论文摘要
基于磁光的电流成像技术比较了拓扑绝缘体材料的单晶和薄膜中拓扑电流分布的性质，BI2SE3。在低温下，单晶具有均匀的拓扑表面电流板，厚约为3.6 nm。随着温度的升高，电流部分转移到晶体大块中，并同时将其分解为高电流密度区域的斑驳网络。高电流密度区域的温度依赖性表明，晶体中的表面向大体转化具有经典相变现象的特征。具有拓扑高电流密度的表面积分数的表现就像是顺序参数。这种相过渡是由混乱驱动的。在BI2SE3薄膜中，我们显示了准一维拓扑边缘的存在，这些拓扑边缘电流被弱施加的磁场抑制。边缘电流转换为膜中均匀的散装电流。
Magneto-optics based current imaging technique compares the nature of topological current distribution in a single crystal and thin film of topological insulator material, Bi2Se3. The single crystal, at low temperatures, has uniform topological surface current sheets which are about 3.6 nm thick. With increasing temperature, the current partially diverts into the crystal bulk and concomitantly, the sheet break up into a patchy network of high and low current density regions. The temperature dependence of the high current density areas shows that the surface to bulk transformation in the crystal has features of classical phase transition phenomena. The surface area fraction with topological high current density behaves like an order parameter. This phase transition is driven by disorder. In Bi2Se3 thin film we show the presence of quasi one-dimensional topological edge currents which are suppressed with a weak applied magnetic field. The edge current transforms into a uniform bulk current in the film.
