论文标题
使用氘等离子体中的氮掺杂钻石增强负离子的表面产生
Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma
论文作者
论文摘要
负离子的产生对于包括质谱，颗粒加速度，材料表面处理和中性束注射（用于磁性约束融合）在内的应用引起了重大关注。不使用低功函数金属的不使用负离子表面产生的效率的方法是减轻这些材料引入的复杂工程挑战的挑战。在这项研究中，我们通过用氮掺杂钻石来研究负离子的产生。将氮掺杂的微晶钻石膜呈负偏见（$ -20 $ V或$ -130 $ V），将其引入低压氘等离子（Helicon source以电容模式下运行，2 PA，26 W），2 PA，26 W）和负离子能量分布功能（NIEDFS）通过质量循环（30 $^$^$^） 750 $^{\ circ} $ c）和掺杂剂的浓度。结果表明，当样品以$ -130 $ V的偏见时，氮掺杂对产量几乎没有影响，但是当应用$ -20 $ V的相对较小的偏置电压被应用时，产量增加了2倍以高于未掺杂的钻石时，当它的温度达到550 $^{\ circe} $ c时。用氮掺杂钻石是控制负离子表面产生的一种新方法，对于各种实际应用，这仍然引起了重大兴趣。
The production of negative ions is of significant interest for applications including mass spectrometry, particle acceleration, material surface processing, and neutral beam injection for magnetic confinement fusion. Methods to improve the efficiency of the surface production of negative ions, without the use of low work function metals, are of interest for mitigating the complex engineering challenges these materials introduce. In this study we investigate the production of negative ions by doping diamond with nitrogen. Negatively biased ($-20$ V or $-130$ V), nitrogen doped micro-crystalline diamond films are introduced to a low pressure deuterium plasma (helicon source operated in capacitive mode, 2 Pa, 26 W) and negative ion energy distribution functions (NIEDFs) are measured via mass spectrometry with respect to the surface temperature (30$^{\circ}$C to 750$^{\circ}$C) and dopant concentration. The results suggest that nitrogen doping has little influence on the yield when the sample is biased at $-130$ V, but when a relatively small bias voltage of $-20$ V is applied the yield is increased by a factor of 2 above that of un-doped diamond when its temperature reaches 550$^{\circ}$C. The doping of diamond with nitrogen is a new method for controlling the surface production of negative ions, which continues to be of significant interest for a wide variety of practical applications.
