论文标题
紧张的狄拉克半分薄膜中的拓扑表面状态
Topological surface states in strained Dirac semimetal thin films
论文作者
论文摘要
我们在半仪式平板和薄膜极限中计算以狄拉克半学的计算研究费米弧状态。我们使用CD $ _3 $ a $ _2 $作为模型系统，并包括破坏$ C_4 $对称和反转对称的扰动。表面状态受散装状态中存在的镜子对称性的保护，从而在这些扰动中生存。费米（Fermi）的状态一直持续到非常薄的膜，比目前在实验中测量的薄膜较薄，但受到破坏哈密顿量对称性的影响。我们的发现与CD $ _3 $ as $ _2 $中运输的实验性观察兼容，并且还表明，对称性的术语保留了Fermi Arc状态，但是在薄膜的限制中仍然会产生深远的影响。
We computationally study the Fermi arc states in a Dirac semimetal, both in a semi-infinite slab and in the thin-film limit. We use Cd$_3$A$_2$ as a model system, and include perturbations that break the $C_4$ symmetry and inversion symmetry. The surface states are protected by the mirror symmetries present in the bulk states and thus survive these perturbations. The Fermi arc states persist down to very thin films, thinner than presently measured experimentally, but are affected by breaking the symmetry of the Hamiltonian. Our findings are compatible with experimental observations of transport in Cd$_3$As$_2$, and also suggest that symmetry-breaking terms that preserve the Fermi arc states nevertheless can have a profound effect in the thin film limit.
