论文标题
GAAS/INGAAS/GAAS量子井的传输特性：温度，磁场和多体效应
Transport properties of a GaAs/InGaAs/GaAs quantum well: temperature, magnetic field and many-body effects
论文作者
论文摘要
我们通过局部校正考虑了多体效应，研究了GAAS/INGAAS/GAAS量子在GAAS/INGAAS/GAAS量子中的Quasi-Two二维电子气体的零和有限温度传输性能。我们考虑表面粗糙度，粗糙度引起的压电，远程充电杂质和均质背景充电杂质散射。研究了量子井宽度，载体密度，温度和局部场校正对电阻比的影响。我们还考虑了总迁移率对多重散射效应的依赖性。
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogeneous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.
