论文标题
Multivalley Systems的大纵磁磁力
Large longitudinal magnetoresistance of multivalley systems
论文作者
论文摘要
假定纵向磁阻（MR）几乎没有意识到，因为当磁场平行于电流时，洛伦兹力在电子上不起作用。但是，在某些情况下，纵向MR变大，超过横向MR。为了解决这个问题，我们研究了基于经典MR理论的Multivalley贡献的纵向MR。我们已经表明，较大的纵向MR是由迁移率张量的偏离分量组件引起的。我们的理论结果与IV-VI半导体（尤其是在PBTE）中的大型纵向MR的实验相符，对于广泛的温度，除了在低温下线性MR外。
The longitudinal magnetoresistance (MR) is assumed to be hardly realized as the Lorentz force does not work on electrons when the magnetic field is parallel to the current. However, in some cases, longitudinal MR becomes large, which exceeds the transverse MR. To solve this problem, we have investigated the longitudinal MR considering multivalley contributions based on the classical MR theory. We have showed that the large longitudinal MR is caused by off-diagonal components of a mobility tensor. Our theoretical results agree with the experiments of large longitudinal MR in IV-VI semiconductors, especially in PbTe, for a wide range of temperatures, except for linear MR at low temperatures.
