论文标题
INSB图案纳米线的现场排放特性
Field emission characteristics of InSb patterned nanowires
论文作者
论文摘要
INSB纳米线阵列具有不同的几何参数，直径和音高，是通过SI（100）底物上自上而下的蚀刻过程制造的。通过使用纳米操纵的钨探针尖作为扫描电子显微镜的真空室内的阳极，研究了INSB纳米线的现场发射特性。据报道，稳定的场发射电流，从一个约1 $μA$的单个纳米线中提取最大强度，对应于高达10 $^4 $ a/cm $^2 $的电流密度。通过监测场发射电流约三个小时，可以探测纳米线的稳定性和鲁棒性。通过在500nm-1300nm的范围内调整阴极 - 轴分离距离，场地增强因子和转交场表现出非单调的依赖性，最大增强$β\ simeq $ 78，最小转交$ e_ {on} \ simeq $ 0.033 v/nm for A Slipation for A Smalitation for A Someation。纳米线之间的空间分离和直径的增加减少导致场排放性能的降低，随着场地增强（$β<$ 60）的降低（$β<$ 60）和增加的转交场（$ e_ {on} \ simeq $ 0.050 v/nm）。最后，系统中电场分布的有限元模拟表明，发射仅限于纳米线顶表面边界附近的有效区域，其环形形状和最大宽度为10 nm。
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$μA$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $β\simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($β<$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.
