论文标题
电介质中的栅极控制电子陷阱检测
Gate-controllable electronic trap detection in dielectrics
论文作者
论文摘要
通过调节MIS设备的门电位，已经证明了栅极控制的电子陷阱检测方法。该方法基于电容电压（CV）曲线的变化以及平板电压（VFB）的测量小于10微秒，这是由于通过金属栅极注射或喷射电子而导致的。使用此方法，在HFO2介电膜中测量了电子陷阱能量分布，并确认最大数量的陷阱（Delta_nt）为1.7x1012 cm-2，对应于硅恒定带（SI-ECB）上方0.45 eV的能级（Delta_EIL）。相比之下，基于ZRO2的MIS设备在整个频带间隙中显示出电子陷阱的更广泛分布。然而，HFO2在深处中含有超过60％的陷阱，而ZRO2中的50％则建立了材料变化的影响。
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than 10 micro-seconds due to injection or ejection of electrons through the metal gate. Using this method, an electronic trap energy distribution was measured in the HfO2 dielectric film and it confirms a maximum number of traps (Delta_NT) of 1.7x1012 cm-2 corresponding to an energy level (Delta_EIL) of 0.45 eV above silicon conduction band (Si-ECB). In comparison, ZrO2-based MIS devices showed a broader distribution of electronic traps throughout the band gap. However, HfO2 contained more than 60% traps in deep level compared to 50% in ZrO2, which establishes the effects of material variation.
