论文标题
透明无定形SNO $ _2 $薄膜晶体管的操作机理的电场热电器调制分析
Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO$_2$ thin-film transistor
论文作者
论文摘要
基于高场效应的透明透明氧化物半导体（TAOSS）透明薄膜晶体管（TTFTS）对于开发高级平板显示器至关重要。在泰斯（Taoss）中，无定形（A-）SNO $ _2 $在当前的a- ingazno4（例如更高的现场效应移动性和无依赖性）方面具有多个优点。尽管已经证明了A-Sno $ _2 $ ttft多次，但由于SNO $ _2 $的强大气体传感特性，到目前为止尚未阐明该操作机制。在这里，我们阐明了通过电场热电图调制分析的A-SNO $ _2 $ TTFT的操作机理。我们使用4.2 nm厚的a-sno $ _2 $作为通道准备了底部山面顶触点TTFT，而无需任何表面钝化。导电通道的有效厚度在空气和真空中的有效厚度约为1.7 + -0.4 nm，但在不同的大气中发生了较大的阈值门电压偏移。这归因于A-SNO $ _2 $的顶表面附近的载流子耗竭，这是由于它与气体分子的相互作用以及Fermi能量的变化。目前的结果将提供一个基本的设计概念，以开发A-Sno $ _2 $ ttft。
Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility are essential for developing advanced flat panel displays. Among TAOSs, amorphous (a-) SnO$_2$ has several advantages against current a-InGaZnO4 such as higher field effect mobility and being indium free. Although a-SnO$_2$ TTFT has been demonstrated several times, the operation mechanism has not been clarified thus far due to the strong gas sensing characteristics of SnO$_2$. Here we clarify the operation mechanism of a-SnO$_2$ TTFT by electric field thermopower modulation analyses. We prepared a bottom-gate top-contact type TTFT using 4.2-nm-thick a-SnO$_2$ as the channel without any surface passivation. The effective thickness of the conducting channel was ~1.7 + - 0.4 nm in air and in vacuum, but a large threshold gate voltage shift occurred in different atmospheres; this is attributed to carrier depletion near at the top surface (~2.5 nm) of the a-SnO$_2$ due to its interaction with the gas molecules and the resulting shift in the Fermi energy. The present results would provide a fundamental design concept to develop a-SnO$_2$ TTFT.
