论文标题
黑磷范德华异质结构发射二极管二极管二极管光子学
Black phosphorus van der Waals heterostructures light emitting diodes for mid-infrared silicon photonics
论文作者
论文摘要
基于III-V/II-VI材料的发光二极管（LED）在中红外（MID-IR）地区提供了令人信服的性能，该地区实现了广泛的应用程序，包括环境监测，国防诊断和医疗诊断。通过在硅光子芯片上将中红外发射器的异质整合通过异质整合来实现片上传感器的努力。但是，这种方法的吸收受到与异质整合过程相关的高成本和界面菌株的限制。在这里，将基于黑磷（BP）的范德华（VDW）异质结构被用作室温LED。演示的设备可以发射线性极化的光，它们的光谱覆盖了技术上重要的中红外大气窗（3-4 um）。此外，BP LED表现出快速的调制速度以及特殊的稳定性，其峰值外部量子效率（QE〜0.9％）与IIII-V/II-VI MID-IR LED相当。通过利用VDW异质结构的集成性，我们进一步展示了硅光子波导集成的BP LED。据报道的混合动力平台对中IR硅光子学拥有巨大的希望。
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications, including environmental monitoring, defense and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip. But the uptake of such approach is limited by the high costs and interfacial strains, associated with the process of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room temperature LEDs. The demonstrated devices can emit linearly polarized light, and their spectra cover the technologically important mid-IR atmospheric window (3-4 um). Additionally, the BP LEDs exhibit fast modulation speed as well as exceptional stability, and its peak extrinsic quantum efficiency (QE~0.9%) is comparable to the III-V/II-VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED. The reported hybrid platform holds great promise for mid-IR silicon photonics.
