论文标题

分子束外延的制备和原位表征狂热薄膜

Molecular beam epitaxy preparation and in situ characterization of FeTe thin films

论文作者

Pereira, V. M., Wu, C. N., Liu, C. E., Liao, S. -S., Chang, C. F., Kuo, C. -Y., Koz, C., Schwarz, U., Lin, H. -J., Tjeng, C. T. Chen. L. H., Altendorf, S. G.

论文摘要

我们已经在Te限制的生长条件下通过分子束外疗(MBE)合成了Fe $ _ {1+y} $ te薄膜。我们发现,对于多种过量的Fe值,可以逐层生长逐层生长,这比散装材料上已知的范围更大。使用X射线磁性圆形二分色谱谱图在Fe l $ _ {2,3} $和TE M $ _ {4,5} $边缘的情况下,我们观察到具有高过量Fe的胶片包含铁磁簇,而具有较低多余的Fe的膜仍不是非磁性的。此外,X射线吸收光谱表明,可以获得具有非常相似的电子结构的膜与高质量的单晶Fe $ _ {1.14} $ TE的膜。我们的结果表明,具有Te限制增长的MBE可能会提供机会,可以合成较少量过多的FE的宴会薄膜,从而更接近可能的超导阶段。

We have synthesized Fe$_{1+y}$Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L$_{2,3}$ and Te M$_{4,5}$ edges, we observed that films with high excess Fe contain ferromagnetic clusters while films with lower excess Fe remain nonmagnetic. Moreover, x-ray absorption spectroscopy showed that it is possible to obtain films with very similar electronic structure as that of a high quality bulk single crystal Fe$_{1.14}$Te. Our results suggest that MBE with Te-limited growth may provide an opportunity to synthesize FeTe films with smaller amounts of excess Fe as to come closer to a possible superconducting phase.

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