论文标题

优化MRAM的写入保真度

Optimizing the Write Fidelity of MRAMs

论文作者

Kim, Yongjune, Jeon, Yoocharn, Guyot, Cyril, Cassuto, Yuval

论文摘要

磁随机记忆(MRAM)是一种有前途的记忆技术,由于其高密度,非挥发性和高耐力。但是,实现高记忆的忠诚度会带来大量的写能成本,应降低大规模部署MRAM。在本文中,我们制定了一个优化问题,以最大程度地给定能量限制,并提出了一种解决该问题来解决它。基本思想是根据每个位位置的重要性分配非均匀写脉冲。我们认为的保真度度量是最小平方误差(MSE),我们提出了一种迭代填充水算法。尽管迭代算法并不能保证全球最优性,但我们可以选择一个适当的起点,以呈指数级降低MSE并保证快速收敛。对于8位访问的单词,提出的算法将MSE降低了21倍。

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate an optimization problem for maximizing the memory fidelity given energy constraints, and propose a biconvex optimization approach to solve it. The basic idea is to allocate non-uniform write pulses depending on the importance of each bit position. The fidelity measure we consider is minimum mean squared error (MSE), for which we propose an iterative water-filling algorithm. Although the iterative algorithm does not guarantee global optimality, we can choose a proper starting point that decreases the MSE exponentially and guarantees fast convergence. For an 8-bit accessed word, the proposed algorithm reduces the MSE by a factor of 21.

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