论文标题
基于厚度和能量过滤源不同的2D物质堆栈的侧面异质结构晶体管
Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source
论文作者
论文摘要
带隙依赖于某些2D材料家族的原子层的数量，可以利用为工程师，并将侧面异质结构（LHS）用作高性能场效应晶体管（FET）。此选项可以提供非常好的晶格匹配以及高杂项质量。更重要的是，这种带有层堆叠的带隙调制可以在2D材料的状态（DOS）密度（DOS）中产生陡峭的过渡，最终可以通过借助能量过滤的来源来实现LH-FETS中的60 mV/十年子阈值。由于其双层构型的特定密度，我们已经观察到PDS2 LH-FET的情况下观察到了这种效果。我们的结果基于从头算和多尺度材料和设备建模，并促进了2D材料设计空间的探索，以便找到更多的突然DOS过渡和更好的合适候选者。
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material, that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS2 LH-FET due to the particular density of states of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling, and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates.
